Intracranial Monitoring Pressure Sensor using MEMS

New Design of Mems piezoresistive pressure sensor

The electromechanical analysis of a piezoresistive pressure microsensor with a square-shaped diaphragm for low-pressure biomedical applications is presented. This analysis is developed through a novel model and a finite element method (FEM) model. A microsensor with a diaphragm 1000 „m length and with thickness=400 µm is studied. The electric response of this microsensor is obtained with applyi...

Modeling of capacitance and sensitivity of a MEMS pressure sensor

In this paper modeling of capacitance and sensitivity for MEMS capacitive pressure sensor is presented. In capacitive sensor the sensitivity is proportional to deflection and capacitance changes versus pressure. Therefore first the diaphragm displacement, capacitance and sensitivity of sensor with square diaphragm have been modeled and then simulated using finite element method (FEM).  It can b...

Intracranial pressure monitoring.

Recent studies have demonstrated that bedside cranial burr hole and insertion of intraparenchymal catheters for intracranial pressure monitoring performed by intensive care physicians is a safe procedure, with a complication rate comparable to other series published by neurosurgeons. The overall morbidity rate is comparable to, or even lower than, that caused by central vein catheterization. Th...

Intracranial Pressure Sensor

Intracranial pressure monitoring.

Brain injury is the result of both primary and secondary damage, yielded by a complex range of factors including ischemia, biochemical changes and inflammatory cascade. Secondary brain injury may be caused by systemic or intracranial mechanisms including oligaemia due to low cerebral perfusion pressure (CPP) or increased cerebral vascular resistance (vascular distortion or cerebro-vascular narr...